A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in Silicon

A fully integrated 2.45 GHz 0.25μm CMOS power amplifier

A fully integrated differential class-AB power amplifier has been designed in a 0.25um CMOS technology. It is intended for medium output power ranges such as Bluetooth class I, and has an operating frequency of 2.45GHz. By using two parallel output stages that can he switched on or off, a high efficiency can be achieved for both high and low output power levels. The simulated maximum output pow...

Low-Power Power Amplifier for 77-GHz Automotive Radars

In this paper we present low-power 77-GHz power amplifier (PA) for the long range automotive radar. The proposed amplifier is designed using TSMC 0.13-μm RF CMOS (fT/fmax=120/140 GHz) technology, and it is powered by a 1.5V supply. To reduce power dissipation, we consider bias voltage, transistor size optimization, matchings and layout optimization. To improve power gain of the amplifier, it ha...

A 28-36 GHz Optimized CMOS Distributed Doherty Power Amplifier with A New Wideband Power Divider Structure

Background and Objectives: In this paper, a new design strategy was proposed in order to enhance bandwidth and efficiency of power amplifier. Methods: To realize the introduced design strategy, a power amplifier was designed using TSMC CMOS 0.18um technology for operating in the Ka band, i.e. the frequency range of 26.5-40GHz. To design the power amplifier, first a power divider (PD) with a ver...

Fully Integrated CMOS Power Amplifier

A 20 GHz fully-integrated power amplifier in a 0.13 μm CMOS process

Research Projects Agency, grant # DAAB07-02-1-L28. In large part because of their guidance, this project was interesting and challenging, enabling me to hone my technical proficiency in integrated circuits while here at Berkeley. My fellow graduate students have provided me with the best possible support for intellectual development and social interaction, particularly Through all the exhilarat...